Friday, June 22, 2012
EC2403 RF AND MICROWAVE ENGINEERING Syllabus 7th Semester ECE - Anna University
EC2403 RF AND
MICROWAVE ENGINEERING L T P C
3 0 0
3
AIM
To enable the student to become familiar with active & passive microwave devices &
components used in Microwave communication systems.
OBJECTIVES
· To study about multi-
port RF networks and RF transistor amplifiers
· To study passive microwave components and their S-
Parameters.
· To study Microwave semiconductor devices & applications.
· To study Microwave sources and amplifiers.
UNIT I
TWO PORT RF NETWORKS-CIRCUIT REPRESENTATION 9
Low frequency parameters-impedance ,admittance, hybrid and ABCD. High frequency parameters-Formulation of S parameters, properties of S parameters-Reciprocal
and
lossless
networks, transmission matrix, Introduction to component basics, wire, resistor,
capacitor and inductor, applications of RF
UNIT II RFTRANSISTOR
AMPLIFIER
DESIGN
AND
MATCHING NETWORKS 9
Amplifier power relation, stability considerations, gain considerations noise figure, impedance matching networks, frequency response, T and Î matching networks, microstripline matching networks
UNIT III
MICROWAVE PASSIVE COMPONENTS
9
Microwave frequency range, significance of microwave frequency range - applications of
microwaves. Scattering matrix -Concept of N port scattering matrix representation- Properties of S matrix-
S matrix formulation of two-port junction. Microwave junctions - Tee junctions -Magic Tee - Rat race - Corners - bends and twists - Directional couplers - two hole directional couplers- Ferrites - important microwave properties and applications
– Termination -
Gyrator- Isolator-Circulator - Attenuator -
Phase changer – S Matrix for
microwave components – Cylindrical cavity resonators.
UNIT IV MICROWAVE SEMICONDUCTOR
DEVICES 9
Microwave semiconductor devices- operation - characteristics and application of BJTs
and FETs -Principles of tunnel diodes - Varactor
and Step recovery diodes - Transferred Electron Devices -Gunn diode- Avalanche Transit
time devices- IMPATT and TRAPATT
devices.
Parametric
devices
-Principles
of operation - applications
of parametric
amplifier .Microwave monolithic integrated circuit (MMIC) - Materials and
fabrication techniques
UNIT V
MICROWAVE TUBES AND MEASUREMENTS 9
Microwave tubes- High
frequency limitations - Principle of operation
of
Multicavity
Klystron, Reflex Klystron, Traveling Wave Tube,
Magnetron. Microwave measurements:
Measurement of power, wavelength, impedance, SWR, attenuation, Q and Phase shift.
TOTAL = 45 PERIODS
TEXT BOOKS
1. Samuel Y Liao, “Microwave Devices & Circuits”
, Prentice Hall of India, 2006.
2. Reinhold.Ludwig and Pavel Bretshko ‘RF Circuit Design”, Pearson Education, Inc.,
2006
REFERENCES
1. Robert. E.Collin-Foundation of Microwave Engg –Mc Graw Hill.
2. Annapurna Das and Sisir
K Das, “Microwave Engineering”, Tata Mc Graw
Hill Inc., 2004.
3. M.M.Radmanesh , RF & Microwave Electronics Illustrated, Pearson
Education, 2007.
4. Robert E.Colin, 2ed “Foundations for Microwave Engineering”, McGraw Hill, 2001
5. D.M.Pozar, “Microwave Engineering.”, John Wiley & sons, Inc., 2006.
By Vinoth
Subscribe to:
Post Comments (Atom)
1 Responses to “EC2403 RF AND MICROWAVE ENGINEERING Syllabus 7th Semester ECE - Anna University”
November 7, 2012 at 11:20 AM
than q
Post a Comment