EC2403 RF AND MICROWAVE ENGINEERING Syllabus 7th Semester ECE - Anna University



EC2403                           RF AND MICROWAVE ENGINEERING                        L T P C
3  0 0  3

AIM

To enable the student to become familiar with active & passive microwave devices &
components used in Microwave communication systems.

OBJECTIVES

·    To study about multi- port RF networks and RF transistor amplifiers
·    To study passive microwave components and their S- Parameters.
·    To study Microwave semiconductor devices & applications.
·    To study Microwave sources and amplifiers.


UNIT I          TWO PORT RF NETWORKS-CIRCUIT REPRESENTATION                      9
Low frequency parameters-impedance ,admittance, hybrid and ABCD. High frequency parameters-Formulation of S parameters, properties of S parameters-Reciprocal and lossless networks, transmission matrix, Introduction to component basics, wire, resistor, capacitor and inductor, applications of RF

UNIT II          RFTRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS 9
Amplifier power relation, stability considerations, gain considerations noise figure, impedance matching networks, frequency response, T and Π matching networks, microstripline matching networks

UNIT III          MICROWAVE PASSIVE COMPONENTS                                                  9
Microwave frequency range, significance of microwave frequency range - applications of microwaves. Scattering matrix -Concept of N port scattering matrix representation- Properties of S matrix- S matrix formulation of two-port junction. Microwave junctions - Tee junctions -Magic Tee - Rat race - Corners - bends and twists - Directional couplers - two hole directional couplers- Ferrites - important microwave properties and applications
Termination - Gyrator- Isolator-Circulator - Attenuator - Phase changer S Matrix for microwave components Cylindrical cavity resonators.

UNIT IV          MICROWAVE SEMICONDUCTOR DEVICES                                          9
Microwave semiconductor devices- operation - characteristics and application of BJTs and FETs -Principles of tunnel diodes - Varactor and Step recovery diodes - Transferred Electron Devices -Gunn diode- Avalanche Transit time devices- IMPATT and TRAPATT devices.  Parametric  devices  -Principles  of  operation  -  applications  of  parametric amplifier .Microwave monolithic integrated circuit (MMIC) - Materials and fabrication techniques

UNIT V            MICROWAVE TUBES AND MEASUREMENTS                                      9
Microwave tubes- High frequency limitations - Principle of operation of Multicavity Klystron, Reflex Klystron, Traveling Wave Tube, Magnetron. Microwave measurements: Measurement of power, wavelength, impedance, SWR, attenuation, Q and Phase shift.


TOTAL = 45 PERIODS




TEXT BOOKS

1. Samuel Y Liao, Microwave Devices & Circuits” , Prentice Hall of India, 2006.
2. Reinhold.Ludwig and Pavel Bretshko ‘RF Circuit Design, Pearson Education, Inc.,
2006

REFERENCES
1. Robert. E.Collin-Foundation of Microwave Engg Mc Graw Hill.
2. Annapurna Das and Sisir K Das, Microwave Engineering, Tata Mc Graw
Hill Inc., 2004.
3. M.M.Radmanesh , RF & Microwave Electronics Illustrated, Pearson
Education, 2007.
4.  Robert E.Colin, 2edFoundations for Microwave Engineering, McGraw Hill, 2001
5.  D.M.Pozar, Microwave Engineering., John Wiley & sons, Inc., 2006.









By Vinoth



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