EC2403 RF AND MICROWAVE ENGINEERING Syllabus - Anna University


EC2403 RF AND MICROWAVE ENGINEERING L T P C
3 0 0 3
UNIT I TWO PORT RF NETWORKS-CIRCUIT REPRESENTATION 9
Low frequency parameters-impedance ,admittance, hybrid and ABCD. High frequency
parameters-Formulation of S parameters, properties of S parameters-Reciprocal and
lossless networks, transmission matrix, Introduction to component basics, wire, resistor,
capacitor and inductor, applications of RF
UNIT II RF TRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS
9
Amplifier power relation, stability considerations, gain considerations noise figure,
impedance matching networks, frequency response, T and Ī  matching networks,
microstripline matching networks
UNIT III MICROWAVE PASSIVE COMPONENTS 9
Microwave frequency range, significance of microwave frequency range - applications of
microwaves. Scattering matrix -Concept of N port scattering matrix representation-
Properties of S matrix- S matrix formulation of two-port junction. Microwave junctions -
Tee junctions -Magic Tee - Rat race - Corners - bends and twists - Directional couplers -
two hole directional couplers- Ferrites - important microwave properties and applications
– Termination - Gyrator- Isolator-Circulator - Attenuator - Phase changer – S Matrix for
microwave components – Cylindrical cavity resonators.
UNIT IV MICROWAVE SEMICONDUCTOR DEVICES 9
Microwave semiconductor devices- operation - characteristics and application of BJTs
and FETs -Principles of tunnel diodes - Varactor and Step recovery diodes - Transferred
Electron Devices -Gunn diode- Avalanche Transit time devices- IMPATT and TRAPATT
devices. Parametric devices -Principles of operation - applications of parametric
amplifier .Microwave monolithic integrated circuit (MMIC) - Materials and fabrication
techniques
UNIT V MICROWAVE TUBES AND MEASUREMENTS 9
Microwave tubes- High frequency limitations - Principle of operation of Multicavity
Klystron, Reflex Klystron, Traveling Wave Tube, Magnetron. Microwave measurements:
Measurement of power, wavelength, impedance, SWR, attenuation, Q and Phase shift.
TOTAL= 45 PERIODS

TEXT BOOK:
1) Samuel Y Liao, “Microwave Devices & Circuits” , Prentice Hall of India, 2006.
2) Reinhold.Ludwig and Pavel Bretshko ‘RF Circuit Design”, Pearson Education, Inc.,
2006
REFERENCES:
1.
Robert. E.Collin-Foundation of Microwave Engg –Mc Graw Hill.
2.
Annapurna Das and Sisir K Das, “Microwave Engineering”, Tata Mc Graw
3.
Hill Inc., 2004.
4.
Education, 2007.
5. Robert E.Colin, 2ed “Foundations for Microwave Engineering”, McGraw Hill, 2001
6. D.M.Pozar, “Microwave Engineering.”, John Wiley & sons, Inc., 2006.
M.M.Radmanesh , RF & Microwave Electronics Illustrated, Pearson
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