EC2023 SOLID STATE ELECTRONIC DEVICES

EC2023 SOLID STATE ELECTRONIC DEVICES L T P C
3 0 0 3
UNIT I CRYSTAL PROPERTIES AND GROWTH OF SEMICONDUCTORS 9
Semiconductor materials - Periodic Structures - Crystal Lattices - Cubic lattices - Planes
and Directions - Diamond lattice - Bulk Crystal Growth - Starting Materials - Growth of
Single Crystal lngots - Wafers - Doping - Epitaxial Growth - Lattice Matching in Epitaxial
Growth - Vapor - Phase Epitaxy - Atoms and Electrons - Introduction to Physical Models
- Experimental Observations - Photoelectric Effect - Atomic spectra - Bohr model -
Quantum Mechanics - Probability and Uncertainty Principle - Schrodinger Wave
Equation - Potential Well Equation - Potential well Problem - Tunneling.
UNIT II ENERGY BANDS AND CHARGE CARRIERS IN
SEMICONDUCTORS AND JUNCTIONS 9
Energy bands in Solids, Energy Bands in Metals, Semiconductors, and Insulators -
Direct and Indirect Semiconductors - Variation of Energy Bands with Alloy Composition -

Charge Carriers in Semiconductors - Electrons and Holes - Electrons and Holes in
Quantum Wells - Carrier Concentrations - Fermi Level - Electron and Hole
Concentrations at Equilibrium - Temperature Dependence of Carrier Concentrations -
Compensation and Space Charge Neutrality - Drift of Carrier in Electric and Magnetic
Fields conductivity and Mobility - Drift and Resistance - Effects of Temperature and
Doping on Mobility - High field effects - Hall Effect - invariance of Fermi level at
equilibrium - Fabrication of p-n junctions, Metal semiconductor junctions.
UNIT III METAL OXIDE SEMICONDUCTOR FET 9
GaAS MESFET - High Electron Mobility Transistor - Short channel Effects - Metal
Insulator Semiconductor FET - Basic Operation and Fabrication - Effects of Real
Surfaces - Threshold Voltage - MOS capacitance Measurements - current - Voltage
Characteristics of MOS Gate Oxides - MOS Field Effect Transistor - Output
characteristics - Transfer characteristics - Short channel MOSFET V-I characteristics -
Control of Threshold Voltage - Substrate Bias Effects - Sub threshold characteristics -
Equivalent Circuit for MOSFET - MOSFET Scaling and Hot Electron Effects - Drain -
Induced Barrier Lowering - short channel and Narrow Width Effect - Gate Induced Drain
Leakage.
UNIT IV OPTOELCTRONIC DEVICES 9
Photodiodes - Current and Voltage in illuminated Junction - Solar Cells - Photo detectors
- Noise and Bandwidth of Photo detectors - Light Emitting Diodes - Light Emitting
Materials - Fiber Optic Communications Multilayer Heterojunctions for LEDs - Lasers -
Semiconductor lasers - Population Inversion at a Junction Emission Spectra for p-n
junction - Basic Semiconductor lasers - Materials for Semiconductor lasers.
UNIT V HIGH FREQUENSY AND HIGH POWER DEVICES 9
Tunnel Diodes, IMPATT Diode, operation of TRAPATT and BARITT Diodes, Gunn
Diode - transferred - electron mechanism, formation and drift of space charge domains,
p-n-p-n Diode, Semiconductor Controlled Rectifier, Insulated Gate Bipolar Transistor.
TOTAL= 45 PERIODS
TEXT BOOK
1. Ben. G. Streetman & Sanjan Banerjee, Solid State Electronic Devices, 5
PHI, 2003.
th Edition,
REFERENCES
1. Donald A. Neaman, Semiconductor Physics and Devices, 3
2. Yannis Tsividis, Operation & Mode line of MOS Transistor, 2
University Press, 1999.
3. Nandita Das Gupta & Aamitava Das Gupta, Semiconductor Devices Modeling a
Technology, PHI, 2004.
4. D.K. Bhattacharya & Rajinish Sharma, Solid State Electronic Devices, Oxford
University Press, 2007.
rd Edition, TMH, 2002.nd Edition, Oxford
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